2SC2551 0.1 a , 300 v npn plastic encapsulated transistor elektronische bauelemente 21-feb-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high voltage ? low saturation voltage ? small collector output capacitance ? complementary to 2sa1091 classification of h fe(1) product-rank 2SC2551-r 2SC2551-o range 30~90 50~150 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 300 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 6 v collector current - continuous i c 0.1 a collector power dissipation p c 400 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 300 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 300 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 6 - - v i e =100 a, i c =0 collector cut ? off current i cbo - - 0.1 a v cb =300v, i e =0 emitter cut ? off current i ebo - - 0.1 a v eb =6v, i c =0 dc current gain h fe(1) 30 - 150 v ce =10v, i c =20ma h fe(2) * 20 - - v ce =10v, i c =1ma collector to emitter saturation voltage v ce(sat) - - 0.5 v i c =20ma, i b =2ma base to emitter voltage v be(sat) - - 1.2 v i c =20ma, i b =2ma transition frequency f t - 80 - mhz v ce =10v, i c =20ma collector output capacitance c ob - - 4 pf v cb =20v, i e =0, f=1mhz ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
2SC2551 0.1 a , 300 v npn plastic encapsulated transistor elektronische bauelemente 21-feb-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
2SC2551 0.1 a , 300 v npn plastic encapsulated transistor elektronische bauelemente 21-feb-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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